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Cadence – Using a DC simulation to find properties of a transist…

Cadence - Using a DC simulation to find properties of a transist...



With this video you will learn to run a DC simulation to find device threshold voltage, capacitance, etc.

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Tags: transistors

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9 Comments

  1. Date: July 20, 2015 at 20:33
    Author: JK T

    why the gm value is different than 2*ID/VDSAT?

  2. Date: July 21, 2015 at 00:00
    Author: Jeffrey Walling

    That expressionassumes square law operation for the transistor. The simulation here is for a 0.18um device, which is a short channel device, so the current is modified by velocity saturation and other short channel effects.

  3. Date: October 12, 2015 at 10:12

    hello Jeffrey! help me pls understand where i can find element transistor N_18_MM P_18_MM cadence device. thanks a lot!

  4. Date: December 18, 2016 at 05:04
    Author: deepak roy

    do full analysis of regulated current mirror ( output impedence, id vs vds bandth width.

  5. Date: March 3, 2018 at 01:23
    Author: Sanjay G

    Hello, Could tell me how to find the leakage current and the leakage power?

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