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4 New Cellular GaN Technology Doherty RF Power Transistors

4 New Cellular GaN Technology Doherty RF Power Transistors



http://nxp.com/RF - These four new transistors collectively cover cellular bands from 1805 to 3600 MHz to meet the needs of wireless carriers that demand superior performance at higher frequencies. NXP’s Patrick Clapier describes the new Doherty amplifier-optimized power transistors provide high power, small footprints, and higher frequencies required for use in current and next-generation cellular base stations.

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Tags: transistors

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